A gate design cuts leakage, raises threshold voltage, and improves stability in GaN power devices, clearing a barrier to wider use in power systems.

Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN) power transistors, making them safer and easier to utilize in high-value ...

Siliconix Inc., a subsidiary of Vishay Intertechnology Inc., has released n-channel MOSFETs that combine a high 3.4 V threshold voltage with on-resistance as low as 2.7 milliOhms. The 10 new MOSFETs, ...

On October 11, Taiwan's National Yang Ming Chiao Tung University (NYCU) announced a groundbreaking research achievement in collaboration with TSMC, which has been published in the prestigious journal ...

Siliconix has introduced a series of n-channel MOSFETs that combine a high 3.4-V threshold voltage (VTH) with on-resistance (RDS(ON)) as low as 2.7 mΩ Siliconix has introduced a series of n-channel ...