III-V photonic crystal (PhC) lasers are potential ultra-compact and power-efficient light sources for future on-chip optical interconnects. While PhC lasers fabricated via conventional vertical ...

In the pursuit of next-generation electronic devices, it is not silicon semiconductors leading the way, but III-V semiconductors that are at the forefront of this endeavor. These remarkable compounds, ...

Fraunhofer ISE researchers utilized a new front metallization technique to produce a III-V gallium arsenide solar cell. For mask and plate front metallization, they used a new two-step printing scheme ...

For years, chipmakers have been searching for an alternative material to replace traditional silicon in the channel for advanced CMOS devices at 7nm and beyond. There’s a good reason, too: At 7nm, ...

Imec, perhaps the world's top semiconductor research center, has created the first monolithic III-V CMOS transistors on 300mm silicon wafers. With current silicon-based transistors hitting a wall at ...